Characteristics of in-situ doped polycrystalline 3C-SiCthin films for M/NEMS applications
نویسندگان
چکیده
منابع مشابه
Electrical properties of in situ phosphorus- and boron-doped polycrystalline SiGeC films
The sheet resistance, effective carrier concentration, and Hall mobility of in situ boronand phosphorus-doped polycrystalline Si0.822yGe0.18Cy films are presented for carbon contents between 0% and 4%. Phosphorus and boron doping levels of 4310 and 2310 cm were achieved for the nand p-type layers, respectively, and remained largely unaffected by carbon content. The phosphorus-doped films showed...
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Polycrystalline 3C-SiC (poly-SiC) is a promising structural material for microelectromechanical systems (MEMS) used in harsh environments. In order to realize poly-SiC based MEMS devices, the electrical, mechanical and metal contact properties of poly-SiC have to be optimized. The poly-SiC films, reviewed here, are deposited by low pressure chemical vapor deposition using 1,3-disilabutane (DSB)...
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ژورنال
عنوان ژورنال: Journal of Sensor Science and Technology
سال: 2008
ISSN: 1225-5475
DOI: 10.5369/jsst.2008.17.5.325